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  esm 765-100 ? 800 fast recovery rectifier diodes high voltage capability fast and soft recovery the specifications and curves enable the determination of the t rr and i rm at 100 c under users condition applications motor controls and converters switch mode power supplies s description fast recovery rectifiers suited for applications in combination with superswitch transistors. december 1994 to220ac (plastic) symbol parameter value unit i frm repetitive peak forward current t p 20 m s 120 a i f (rms) rms forward current 16 a i f (av) average forward current t c = 100 c d = 0.5 10 a i fsm surge non repetitive forward current t p = 10ms sinusoidal 120 a p tot power dissipation t c = 100 c 20 w t stg t j storage and junction temperature range - 40 to + 150 - 40 to + 150 c absolute maximum ratings (limiting values) symbol parameter esm 765- unit 100 200 400 600 800 v rrm repetitive peak reverse voltage 100 200 400 600 800 v v rsm non repetitive peak reverse voltage 100 200 400 600 800 v symbol parameter value unit r th (j - c) junction-case 2 c/w thermal resistance k a 1/4
2/4 synbol test conditions min. typ. max. unit i r t j = 25 c v r = v rrm 20 m a t j = 100 c 1ma v f t j = 25 c i f = 10a 1.4 v t j = 100 c 1.35 static characteristics electrical characteristics symbol test conditions min. typ. max. unit t rr t j = 25 ci f = 1a di f /dt = - 15a/ m s v r = 30v 300 ns q rr t j = 25 ci f = 10a di f /dt = - 50a/ m s v r = 200v 2.3 m c recovery characteristics to evaluate the conduction losses use the following equations : v f = 1.2 + 0.015 i f p = 1.2 x i f(av) + 0.015 i f 2 (rms) figure 1. low frequency power losses versus average current figure 2. peak current versus form factor figure 3. non repetitive peak surge current versus overload duration figure 4. thermal impedance versus pulse width esm 765-100 ? 800
figure 5. voltage drop versus forward current figure 6. capacitance versus applied reverse voltage figure 7. recovery charge versus di f /dt figure 8. recovery time versus di f /dt figure 9. peak reverse current versus di f /dt 3/4 esm 765-100 ? 800
4/4 package mechanical data to220ac plastic cooling method : by conduction (method c) marking : type number weight : 2.4g recommended torque value : 80cm. n maximum torque value : 100cm. n ref. dimensions millimeters inches min. max. min. max. a 10.0 10.4 0.393 0.409 b 15.2 15.9 0.598 0.626 c 13 14 0.511 0.551 d 6.2 6.6 0.244 0.260 e 16.4 typ. 0.645 typ. f 3.5 4.2 0.137 0.165 g 2.65 2.95 0.104 0.116 h 4.4 4.6 0.173 0.181 i 3.75 3.85 0.147 0.151 j 1.23 1.32 0.048 0.051 k 1.27 typ. 0.050 typ. l 0.49 0.70 0.019 0.027 m 2.4 2.72 0.094 0.107 n 4.95 5.15 0.194 0.203 o 1.14 1.70 0.044 0.067 p 0.61 0.88 0.024 0.034 information furnished is believed to be accurate and reliable. however, sgs-thomson microelectronics assumes no responsabi lity for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result f rom its use. no license is granted by implication or otherwise under any patent or patent rights of sgs-thomson microelectronics. specifications ment ioned in this publication are subject to ch ange without notice. this publi cation supersedes and replaces all information previously supplied. sgs-thomson microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of sgs-thomson microelectronics. ? 1994 sgs-thomson microelectronics - printed in italy - all rights reserved. sgs-thomson microelectronics group of companies australia - brazil - france - germany - hong kong - italy - japan - korea - malaysia - malta - morocco - the netherlands singapore - spain - sweden - switzerland - taiwan - thailand - united kingdom - u.s.a. esm 765-100 ? 800


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